3.3kV High Speed IGBT Module For Bi-directional and Medium Frequency Application
نویسندگان
چکیده
3.3kV high speed IGBT module was developed. Optimized lifetime control realized drastically decreasing of both of turn off loss and recovery loss. This high speed characteristic is suitable for bi-directional and medium frequency application such as resonant DC/DC converter. IGBT switching and diode reverse recovery behaviour at resonant DC/DC converter modelled circuit were demonstrated. Obviously, this new designed module shows lower loss than conventional high speed module and therefore better adaptability for bi-directional and medium frequency applications. This design concept is able to apply for 6.5kV IGBT module. In addition, diode loss of new design module was compared with 3kV-SiC-JBS at resonant DC/DC converter modelled circuit.
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